SMA6010
Data Sheet
Attribute
Description
Manufacturer Part Number
SMA6010
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
3 NPN,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 201
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 108 | ₹ 234.70 | ₹ 25,347.60 |
| 18 | ₹ 301.51 | ₹ 5,427.18 |
| 1 | ₹ 496.07 | ₹ 496.07 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 3 NPN, 3 PNP Darlington (3-Phase Bridge) | |
| Maximum Collector Amps | 4A | |
| Max Collector-Emitter Breakdown | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 6mA, 3A | |
| Collector Cutoff Max | 100µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 3A, 4V | |
| Maximum Power Handling | 4W | |
| Transition Freq | 75MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 12-SIP, Exposed Tab |
Description
Measures resistance at forward current 100µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 4A. Offers a collector cutoff current rated at 100µA (ICBO). Features a DC current gain hFE at Ic evaluated at 1.5V @ 6mA, 3A. Offers 75MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case 12-SIP, Exposed Tab providing mechanical and thermal shielding. Peak power 4W for device protection. Type of transistor 3 NPN, 3 PNP Darlington (3-Phase Bridge) for circuit architecture. Peak Vce(on) at Vge 1.5V @ 6mA, 3A for transistor parameters. Highest collector-emitter breakdown voltage 60V.