2SD2560
Data Sheet
Attribute
Description
Manufacturer Part Number
2SD2560
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 1313
Distributor: 128
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 8000 | ₹ 120.15 | ₹ 9,61,200.00 |
| 4000 | ₹ 125.49 | ₹ 5,01,960.00 |
| 2000 | ₹ 126.38 | ₹ 2,52,760.00 |
| 1000 | ₹ 128.16 | ₹ 1,28,160.00 |
| 500 | ₹ 132.61 | ₹ 66,305.00 |
| 100 | ₹ 172.66 | ₹ 17,266.00 |
| 50 | ₹ 243.86 | ₹ 12,193.00 |
| 10 | ₹ 249.20 | ₹ 2,492.00 |
| 1 | ₹ 376.47 | ₹ 376.47 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN - Darlington | |
| Maximum Collector Amps | 15A | |
| Max Collector-Emitter Breakdown | 150V | |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 10mA, 10A | |
| Collector Cutoff Max | 100µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5000 @ 10A, 4V | |
| Maximum Power Handling | 130W | |
| Transition Freq | 70MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-3P-3, SC-65-3 |
Description
Measures resistance at forward current 100µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 15A. Offers a collector cutoff current rated at 100µA (ICBO). Features a DC current gain hFE at Ic evaluated at 2.5V @ 10mA, 10A. Offers 70MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-3P-3, SC-65-3 providing mechanical and thermal shielding. Peak power 130W for device protection. Type of transistor NPN - Darlington for circuit architecture. Peak Vce(on) at Vge 2.5V @ 10mA, 10A for transistor parameters. Highest collector-emitter breakdown voltage 150V.
