Attribute
Description
Manufacturer Part Number
MPSW63
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP - Darlington | |
| Maximum Collector Amps | 500mA | |
| Max Collector-Emitter Breakdown | 30V | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V | |
| Maximum Power Handling | 1W | |
| Transition Freq | 125MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-226-3, TO-92-3 Long Body |
Description
Provides a maximum collector current (Ic) of 500mA. Features a DC current gain hFE at Ic evaluated at 1.5V @ 100µA, 100mA. Offers 125MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-226-3, TO-92-3 Long Body providing mechanical and thermal shielding. Peak power 1W for device protection. Type of transistor PNP - Darlington for circuit architecture. Peak Vce(on) at Vge 1.5V @ 100µA, 100mA for transistor parameters. Highest collector-emitter breakdown voltage 30V.
