Attribute
Description
Manufacturer Part Number
MJE271G
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP - Darlington | |
| Maximum Collector Amps | 2A | |
| Max Collector-Emitter Breakdown | 100V | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 1.2mA, 120mA | |
| Collector Cutoff Max | 1mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1500 @ 120mA, 10V | |
| Maximum Power Handling | 1.5W | |
| Transition Freq | 6MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-225AA, TO-126-3 |
Description
Measures resistance at forward current 1mA for LED or diode evaluation. Provides a maximum collector current (Ic) of 2A. Offers a collector cutoff current rated at 1mA. Features a DC current gain hFE at Ic evaluated at 3V @ 1.2mA, 120mA. Offers 6MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-225AA, TO-126-3 providing mechanical and thermal shielding. Peak power 1.5W for device protection. Type of transistor PNP - Darlington for circuit architecture. Peak Vce(on) at Vge 3V @ 1.2mA, 120mA for transistor parameters. Highest collector-emitter breakdown voltage 100V.
