BCP56T1G
Data Sheet
Attribute
Description
Manufacturer Part Number
BCP56T1G
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
1A,
80V
Note :
GST will not be applied to orders shipping outside of India
Stock: 100
Distributor: 13
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100 | ₹ 6.90 | ₹ 690.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 1A | |
| Max Collector-Emitter Breakdown | 80V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V | |
| Maximum Power Handling | 1.5W | |
| Transition Freq | 130MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-261-4, TO-261AA |
Description
Provides a maximum collector current (Ic) of 1A. Features a DC current gain hFE at Ic evaluated at 500mV @ 50mA, 500mA. Offers 130MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case TO-261-4, TO-261AA providing mechanical and thermal shielding. Peak power 1.5W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 500mV @ 50mA, 500mA for transistor parameters. Highest collector-emitter breakdown voltage 80V.
