Attribute
Description
Manufacturer Part Number
PDTC143TT,215
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 422185
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 1.40 | ₹ 1,40,000.00 |
| 10000 | ₹ 1.66 | ₹ 16,600.00 |
| 1000 | ₹ 1.87 | ₹ 1,870.00 |
| 500 | ₹ 2.03 | ₹ 1,015.00 |
| 100 | ₹ 2.25 | ₹ 225.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN - Pre-Biased | |
| Maximum Collector Amps | 100mA | |
| Max Collector-Emitter Breakdown | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA | |
| Collector Cutoff Max | 1µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 5V | |
| Maximum Power Handling | 250mW | |
| Transition Freq | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current 1µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 100mA. Offers a collector cutoff current rated at 1µA. Features a DC current gain hFE at Ic evaluated at 100mV @ 250µA, 5mA. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 250mW for device protection. Type of transistor NPN - Pre-Biased for circuit architecture. Peak Vce(on) at Vge 100mV @ 250µA, 5mA for transistor parameters. Highest collector-emitter breakdown voltage 50V.