2N3737
Data Sheet
Attribute
Description
Manufacturer Part Number
2N3737
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
1.5A,
40V
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 1.5A | |
| Max Collector-Emitter Breakdown | 40V | |
| Vce Saturation (Max) @ Ib, Ic | 950mV @ 100mA, 1A | |
| Collector Cutoff Max | 10µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A, 1.5V | |
| Maximum Power Handling | 500mW | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-206AB, TO-46-3 Metal Can |
Description
Measures resistance at forward current 10µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 1.5A. Offers a collector cutoff current rated at 10µA (ICBO). Features a DC current gain hFE at Ic evaluated at 950mV @ 100mA, 1A. Mounting style Through Hole for structural integrity. Enclosure/case TO-206AB, TO-46-3 Metal Can providing mechanical and thermal shielding. Peak power 500mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 950mV @ 100mA, 1A for transistor parameters. Highest collector-emitter breakdown voltage 40V.