2N2219
Data Sheet
Attribute
Description
Manufacturer Part Number
2N2219
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
800mA,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 44
Distributor: 13
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 44 | ₹ 389.06 | ₹ 17,118.64 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 800mA | |
| Max Collector-Emitter Breakdown | 30V | |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA | |
| Collector Cutoff Max | 10µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10mV | |
| Maximum Power Handling | 800mW | |
| Transition Freq | 250MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-205AD, TO-39-3 Metal Can |
Description
Measures resistance at forward current 10µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 800mA. Offers a collector cutoff current rated at 10µA (ICBO). Features a DC current gain hFE at Ic evaluated at 1.6V @ 50mA, 500mA. Offers 250MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-205AD, TO-39-3 Metal Can providing mechanical and thermal shielding. Peak power 800mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 1.6V @ 50mA, 500mA for transistor parameters. Highest collector-emitter breakdown voltage 30V.
