DTC124EUA-TP

DTC124EUA-TP

Data Sheet

Attribute
Description
Manufacturer Part Number
DTC124EUA-TP
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
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Stock:
300000

Distributor: 117

Lead Time: Not specified

Quantity Unit Price Ext. Price
300000 ₹ 1.44 ₹ 4,32,000.00
150000 ₹ 1.55 ₹ 2,32,500.00
75000 ₹ 1.69 ₹ 1,26,750.00
30000 ₹ 1.91 ₹ 57,300.00
21000 ₹ 2.01 ₹ 42,210.00
15000 ₹ 2.12 ₹ 31,800.00
9000 ₹ 2.29 ₹ 20,610.00
6000 ₹ 2.45 ₹ 14,700.00
3000 ₹ 2.75 ₹ 8,250.00
1000 ₹ 3.35 ₹ 3,350.00
500 ₹ 3.82 ₹ 1,910.00
100 ₹ 5.28 ₹ 528.00
10 ₹ 8.54 ₹ 85.40
1 ₹ 14.23 ₹ 14.23

Product Attributes

Type Description
Category
Transistor Class NPN - Pre-Biased
Maximum Collector Amps 30mA
Max Collector-Emitter Breakdown 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Collector Cutoff Max 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA, 5V
Maximum Power Handling 200mW
Transition Freq 250MHz
Attachment Mounting Style Surface Mount
Component Housing Style SC-70, SOT-323

Description

Measures resistance at forward current 500nA for LED or diode evaluation. Provides a maximum collector current (Ic) of 30mA. Offers a collector cutoff current rated at 500nA. Features a DC current gain hFE at Ic evaluated at 300mV @ 500µA, 10mA. Offers 250MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case SC-70, SOT-323 providing mechanical and thermal shielding. Peak power 200mW for device protection. Type of transistor NPN - Pre-Biased for circuit architecture. Peak Vce(on) at Vge 300mV @ 500µA, 10mA for transistor parameters. Highest collector-emitter breakdown voltage 50V.

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