ZXTP19100CGTA
Data Sheet
Attribute
Description
Manufacturer Part Number
ZXTP19100CGTA
Manufacturer
Description
ZXTP19100CG Series PNP 100 V 2 A Medium Power Transistor SMT...
Manufacturer Lead Time
28 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP | |
| Maximum Collector Amps | 2A | |
| Max Collector-Emitter Breakdown | 100V | |
| Vce Saturation (Max) @ Ib, Ic | 295mV @ 200mA, 2A | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V | |
| Maximum Power Handling | 3W | |
| Transition Freq | 142MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-261-4, TO-261AA |
Description
Provides a maximum collector current (Ic) of 2A. Features a DC current gain hFE at Ic evaluated at 295mV @ 200mA, 2A. Offers 142MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case TO-261-4, TO-261AA providing mechanical and thermal shielding. Peak power 3W for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 295mV @ 200mA, 2A for transistor parameters. Highest collector-emitter breakdown voltage 100V.
