ZXT12P12DXTC
Data Sheet
Attribute
Description
Manufacturer Part Number
ZXT12P12DXTC
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
2 PNP (Dual),...
Manufacturer Lead Time
28 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 2 PNP (Dual) | |
| Maximum Collector Amps | 3A | |
| Max Collector-Emitter Breakdown | 12V | |
| Vce Saturation (Max) @ Ib, Ic | 270mV @ 30mA, 3A | |
| Collector Cutoff Max | 100nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1A, 2V | |
| Maximum Power Handling | 1.04W | |
| Transition Freq | 85MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Description
Measures resistance at forward current 100nA for LED or diode evaluation. Provides a maximum collector current (Ic) of 3A. Offers a collector cutoff current rated at 100nA. Features a DC current gain hFE at Ic evaluated at 270mV @ 30mA, 3A. Offers 85MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) providing mechanical and thermal shielding. Peak power 1.04W for device protection. Type of transistor 2 PNP (Dual) for circuit architecture. Peak Vce(on) at Vge 270mV @ 30mA, 3A for transistor parameters. Highest collector-emitter breakdown voltage 12V.
