IMT4-7-F
Data Sheet
Attribute
Description
Manufacturer Part Number
IMT4-7-F
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
2 PNP (Dual),...
Manufacturer Lead Time
28 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 2 PNP (Dual) | |
| Maximum Collector Amps | 50mA | |
| Max Collector-Emitter Breakdown | 120V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 6V | |
| Maximum Power Handling | 225mW | |
| Transition Freq | 140MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-23-6 |
Description
Provides a maximum collector current (Ic) of 50mA. Features a DC current gain hFE at Ic evaluated at 500mV @ 1mA, 10mA. Offers 140MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case SOT-23-6 providing mechanical and thermal shielding. Peak power 225mW for device protection. Type of transistor 2 PNP (Dual) for circuit architecture. Peak Vce(on) at Vge 500mV @ 1mA, 10mA for transistor parameters. Highest collector-emitter breakdown voltage 120V.
