2DD1766P-13
Data Sheet
Attribute
Description
Manufacturer Part Number
2DD1766P-13
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
2A,
32V
Manufacturer Lead Time
28 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 2A | |
| Max Collector-Emitter Breakdown | 32V | |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 500mA, 3V | |
| Maximum Power Handling | 1W | |
| Transition Freq | 220MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-243AA |
Description
Provides a maximum collector current (Ic) of 2A. Features a DC current gain hFE at Ic evaluated at 800mV @ 200mA, 2A. Offers 220MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case TO-243AA providing mechanical and thermal shielding. Peak power 1W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 800mV @ 200mA, 2A for transistor parameters. Highest collector-emitter breakdown voltage 32V.
