VP0300B-E3

VP0300B-E3

Data Sheet

Attribute
Description
Manufacturer Part Number
VP0300B-E3
Manufacturer
Description
MOSFET P-CH 30V 0.32A TO-205
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tube
Availability Status Obsolete
Field Effect Transistor Type P-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 30 V
Continuous Drain Current at 25C 320mA (Ta)
Gate Drive Voltage Range -
Max On-State Resistance 2.5Ohm @ 1A, 12V
Max Threshold Gate Voltage 4.5V @ 1mA
Max Gate Charge at Vgs -
Maximum Gate Voltage -
Max Input Cap at Vds 150 pF @ 15 V
Transistor Special Function -
Max Heat Dissipation -
Ambient Temp Range -
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style -
Vendor Package Type -
Component Housing Style -

Description

Supports a continuous drain current (Id) of 320mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 30 V. Accommodates FET classification identified as P-Channel. The highest input capacitance is 150 pF @ 15 V at Vds for safeguarding the device. The input capacitance is rated at 150 pF @ 15 V at Vds for optimal performance. Enclosure Tube for component protection or transport. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id and Vgs 2.5Ohm @ 1A, 12V for MOSFET criteria. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 4.5V @ 1mA for MOSFET threshold level.

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