Stock: 396
Distributor: 120
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 246 | ₹ 163.48 | ₹ 40,216.08 |
| 121 | ₹ 172.77 | ₹ 20,905.17 |
| 57 | ₹ 186.08 | ₹ 10,606.56 |
| 19 | ₹ 199.36 | ₹ 3,787.84 |
| 7 | ₹ 259.17 | ₹ 1,814.19 |
| 2 | ₹ 398.72 | ₹ 797.44 |
Stock: 316
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 180 | ₹ 231.40 | ₹ 41,652.00 |
| 68 | ₹ 249.20 | ₹ 16,945.60 |
| 1 | ₹ 534.00 | ₹ 534.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | TrenchFET® | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 60 V | |
| Continuous Drain Current at 25C | 60A (Tc) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 12mOhm @ 30A, 10V | |
| Max Threshold Gate Voltage | 4.5V @ 250µA | |
| Max Gate Charge at Vgs | 55 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 1970 pF @ 30 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 3.25W (Ta), 100W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-220AB | |
| Component Housing Style | TO-220-3 |
Description
Supports a continuous drain current (Id) of 60A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 60 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 55 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 55 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1970 pF @ 30 V at Vds for safeguarding the device. The input capacitance is rated at 1970 pF @ 30 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Bulk for component protection or transport. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Enclosure type TO-220AB ensuring device integrity. Highest power dissipation 3.25W (Ta), 100W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 55 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 12mOhm @ 30A, 10V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type TO-220AB for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 4.5V @ 250µA for MOSFET threshold level.
