Stock: 1000
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1000 | ₹ 231.60 | ₹ 2,31,600.00 |
| 500 | ₹ 287.55 | ₹ 1,43,775.00 |
| 100 | ₹ 330.38 | ₹ 33,038.00 |
| 10 | ₹ 390.43 | ₹ 3,904.30 |
| 1 | ₹ 402.88 | ₹ 402.88 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | - | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 650 V | |
| Continuous Drain Current at 25C | 24A (Tc) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 145mOhm @ 12A, 10V | |
| Max Threshold Gate Voltage | 4V @ 250µA | |
| Max Gate Charge at Vgs | 122 nC @ 10 V | |
| Maximum Gate Voltage | ±30V | |
| Max Input Cap at Vds | 2740 pF @ 100 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 250W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-220AB | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 24A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 650 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 122 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 122 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 2740 pF @ 100 V at Vds for safeguarding the device. The input capacitance is rated at 2740 pF @ 100 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Enclosure type TO-220AB ensuring device integrity. Highest power dissipation 250W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 122 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 145mOhm @ 12A, 10V for MOSFET criteria. Manufacturer package type TO-220AB for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±30V for MOSFET parameters. Peak Vgs(th) at Id 4V @ 250µA for MOSFET threshold level.
