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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | - | |
| IC Encapsulation Type | Tube | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 600 V | |
| Continuous Drain Current at 25C | 22A (Tc) | |
| Gate Drive Voltage Range | - | |
| Max On-State Resistance | 190mOhm @ 11A, 10V | |
| Max Threshold Gate Voltage | 4V @ 250µA | |
| Max Gate Charge at Vgs | 110 nC @ 10 V | |
| Maximum Gate Voltage | - | |
| Max Input Cap at Vds | 2810 pF @ 25 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 250W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-220 Full Pack | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 22A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 600 V. Accommodates FET classification identified as N-Channel. Guarantees maximum 110 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 110 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 2810 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 2810 pF @ 25 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Enclosure type TO-220 Full Pack ensuring device integrity. Highest power dissipation 250W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 110 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 190mOhm @ 11A, 10V for MOSFET criteria. Manufacturer package type TO-220 Full Pack for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs(th) at Id 4V @ 250µA for MOSFET threshold level.
