SIE860DF-T1-GE3
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 60A (Tc) | |
| Max On-State Resistance | 2.1 mOhm @ 21.7A, 10V | |
| Max Threshold Gate Voltage | 2.5V @ 250µA | |
| Gate Charge at Vgs | 105nC @ 10V | |
| Input Cap at Vds | 4500pF @ 15V | |
| Maximum Power Handling | 104W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 10-PolarPAK® (M) |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 60A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 105nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 4500pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 10-PolarPAK® (M) providing mechanical and thermal shielding. Peak power 104W for device protection. Peak Rds(on) at Id 105nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 2.1 mOhm @ 21.7A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold level.
