SI8445DB-T2-E1

SI8445DB-T2-E1
Attribute
Description
Manufacturer Part Number
SI8445DB-T2-E1
Manufacturer
Description
MOSFET P-CH 20V 9.8A 4MICROFOOT
Note : GST will not be applied to orders shipping outside of India

Stock:
3489

Distributor: 118

Lead Time: Not specified

Quantity Unit Price Ext. Price
2371 ₹ 26.43 ₹ 62,665.53
530 ₹ 30.04 ₹ 15,921.20
1 ₹ 72.09 ₹ 72.09

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Field Effect Transistor Type P-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 20 V
Continuous Drain Current at 25C 9.8A (Tc)
Gate Drive Voltage Range 1.2V, 4.5V
Max On-State Resistance 84mOhm @ 1A, 4.5V
Max Threshold Gate Voltage 850mV @ 250µA
Max Gate Charge at Vgs 16 nC @ 5 V
Maximum Gate Voltage ±5V
Max Input Cap at Vds 700 pF @ 10 V
Transistor Special Function -
Max Heat Dissipation 1.8W (Ta), 11.4W (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type 4-Microfoot
Component Housing Style 4-XFBGA, CSPBGA

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 9.8A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 20 V. Accommodates drive voltage specified at 1.2V, 4.5V for RdsOn regulation. Accommodates FET classification identified as P-Channel. Guarantees maximum 16 nC @ 5 V gate charge at Vgs for enhanced switching efficiency. Upholds 16 nC @ 5 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 700 pF @ 10 V at Vds for safeguarding the device. The input capacitance is rated at 700 pF @ 10 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case 4-XFBGA, CSPBGA providing mechanical and thermal shielding. Enclosure type 4-Microfoot ensuring device integrity. Highest power dissipation 1.8W (Ta), 11.4W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 16 nC @ 5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 84mOhm @ 1A, 4.5V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type 4-Microfoot for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±5V for MOSFET parameters. Peak Vgs(th) at Id 850mV @ 250µA for MOSFET threshold level.

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