Attribute
Description
Manufacturer Part Number
SI5504DC-T1-E3
Manufacturer
Description
MOSFET N/P-CH 30V CHIPFET 1206-8
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N and P-Channel | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 2.9A, 2.1A | |
| Max On-State Resistance | 85 mOhm @ 2.9A, 10V | |
| Max Threshold Gate Voltage | 1V @ 250µA | |
| Gate Charge at Vgs | 7.5nC @ 10V | |
| Input Cap at Vds | - | |
| Maximum Power Handling | 1.1W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SMD, Flat Lead |
Description
Measures resistance at forward current N and P-Channel for LED or diode evaluation. Supports a continuous drain current (Id) of 2.9A, 2.1A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as N and P-Channel. Upholds 7.5nC @ 10V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Enclosure/case 8-SMD, Flat Lead providing mechanical and thermal shielding. Peak power 1.1W for device protection. Peak Rds(on) at Id 7.5nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 85 mOhm @ 2.9A, 10V for MOSFET criteria. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.
