SI3467DV-T1-E3
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | TrenchFET® | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Active | |
| Field Effect Transistor Type | P-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 20 V | |
| Continuous Drain Current at 25C | 3.8A (Ta) | |
| Gate Drive Voltage Range | 4.5V, 10V | |
| Max On-State Resistance | 54mOhm @ 5A, 10V | |
| Max Threshold Gate Voltage | 3V @ 250µA | |
| Max Gate Charge at Vgs | 13 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | - | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 1.14W (Ta) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | 6-TSOP | |
| Component Housing Style | SOT-23-6 Thin, TSOT-23-6 |
Description
Supports a continuous drain current (Id) of 3.8A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as P-Channel. Guarantees maximum 13 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 13 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case SOT-23-6 Thin, TSOT-23-6 providing mechanical and thermal shielding. Enclosure type 6-TSOP ensuring device integrity. Highest power dissipation 1.14W (Ta) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 13 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 54mOhm @ 5A, 10V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type 6-TSOP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 3V @ 250µA for MOSFET threshold level.
