SI3445DV-T1-E3
Data Sheet
Stock: 2445
Distributor: 120
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 816 | ₹ 39.05 | ₹ 31,864.80 |
| 344 | ₹ 42.05 | ₹ 14,465.20 |
| 160 | ₹ 48.06 | ₹ 7,689.60 |
| 47 | ₹ 56.32 | ₹ 2,647.04 |
| 13 | ₹ 97.62 | ₹ 1,269.06 |
| 3 | ₹ 150.19 | ₹ 450.57 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | TrenchFET® | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | P-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 8 V | |
| Continuous Drain Current at 25C | 5.6A (Ta) | |
| Gate Drive Voltage Range | 1.8V, 4.5V | |
| Max On-State Resistance | 42mOhm @ 5.6A, 4.5V | |
| Max Threshold Gate Voltage | 1V @ 250µA | |
| Max Gate Charge at Vgs | 25 nC @ 4.5 V | |
| Maximum Gate Voltage | ±8V | |
| Max Input Cap at Vds | - | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 2W (Ta) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | 6-TSOP | |
| Component Housing Style | SOT-23-6 Thin, TSOT-23-6 |
Description
Supports a continuous drain current (Id) of 5.6A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 8 V. Accommodates drive voltage specified at 1.8V, 4.5V for RdsOn regulation. Accommodates FET classification identified as P-Channel. Guarantees maximum 25 nC @ 4.5 V gate charge at Vgs for enhanced switching efficiency. Upholds 25 nC @ 4.5 V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case SOT-23-6 Thin, TSOT-23-6 providing mechanical and thermal shielding. Enclosure type 6-TSOP ensuring device integrity. Highest power dissipation 2W (Ta) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 25 nC @ 4.5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 42mOhm @ 5.6A, 4.5V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type 6-TSOP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±8V for MOSFET parameters. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.
