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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 60 V | |
| Continuous Drain Current at 25C | 340mA | |
| Gate Drive Voltage Range | 4.5V, 10V | |
| Max On-State Resistance | 5Ohm @ 300mA, 10V | |
| Max Threshold Gate Voltage | 2.5V @ 250µA | |
| Max Gate Charge at Vgs | 0.6 nC @ 4.5 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 21 pF @ 5 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 350mW (Ta) | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | SOT-23-3 (TO-236) | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 340mA at 25°C. Supports Vdss drain-to-source voltage rated at 60 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 0.6 nC @ 4.5 V gate charge at Vgs for enhanced switching efficiency. Upholds 0.6 nC @ 4.5 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 21 pF @ 5 V at Vds for safeguarding the device. The input capacitance is rated at 21 pF @ 5 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Bulk for component protection or transport. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Enclosure type SOT-23-3 (TO-236) ensuring device integrity. Highest power dissipation 350mW (Ta) for effective thermal control. Peak Rds(on) at Id 0.6 nC @ 4.5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 5Ohm @ 300mA, 10V for MOSFET criteria. Manufacturer package type SOT-23-3 (TO-236) for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold level.
