2N4391-2
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N-Channel | |
| Breakdown VBR GSS | 40V | |
| Drain-Source Breakdown Volts | - | |
| Drain Current at Vds | 50mA @ 20V | |
| Drain Current Id | - | |
| Cutoff VGS at Id | 4V @ 1nA | |
| Maximum Power Handling | 1.8W | |
| Input Cap at Vds | 14pF @ 20V | |
| RDS On Resistance | 30 Ohm | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-206AA, TO-18-3 Metal Can |
Description
Measures resistance at forward current N-Channel for LED or diode evaluation. Supports a drain current Idss at Vds measured at 50mA @ 20V. Accommodates FET classification identified as N-Channel. The input capacitance is rated at 14pF @ 20V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Resistance in the on-state 30 Ohm for efficient conduction. Enclosure/case TO-206AA, TO-18-3 Metal Can providing mechanical and thermal shielding. Peak power 1.8W for device protection. Peak Rds(on) at Id 4V @ 1nA for MOSFET efficiency. RDS(on) resistance value 30 Ohm for MOSFET operation. V(BR)GSS breakdown level 40V for semiconductors. Cutoff voltage VGS off at Id 4V @ 1nA for MOSFETs.