Stock: 616
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 550 | ₹ 425.20 | ₹ 2,33,860.00 |
| 339 | ₹ 485.94 | ₹ 1,64,733.66 |
| 1 | ₹ 1,214.85 | ₹ 1,214.85 |
Stock: 11
Distributor: 11
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 30 | ₹ 433.43 | ₹ 13,002.90 |
| 10 | ₹ 590.96 | ₹ 5,909.60 |
| 2 | ₹ 628.34 | ₹ 1,256.68 |
| 1 | ₹ 661.27 | ₹ 661.27 |
Stock: 30
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 600 | ₹ 478.36 | ₹ 2,87,016.00 |
| 100 | ₹ 483.51 | ₹ 48,351.00 |
| 10 | ₹ 514.14 | ₹ 5,141.40 |
| 3 | ₹ 933.31 | ₹ 2,799.93 |
Stock: 30
Distributor: 122
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 600 | ₹ 478.53 | ₹ 2,87,118.00 |
| 100 | ₹ 483.68 | ₹ 48,368.00 |
| 10 | ₹ 514.32 | ₹ 5,143.20 |
| 1 | ₹ 933.64 | ₹ 933.64 |
Stock: 487
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 510 | ₹ 490.67 | ₹ 2,50,241.70 |
| 120 | ₹ 521.67 | ₹ 62,600.40 |
| 30 | ₹ 611.61 | ₹ 18,348.30 |
| 1 | ₹ 1,021.72 | ₹ 1,021.72 |
Stock: 477
Distributor: 58
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 25 | ₹ 672.04 | ₹ 16,801.00 |
| 19 | ₹ 730.53 | ₹ 13,880.07 |
| 14 | ₹ 787.30 | ₹ 11,022.20 |
| 7 | ₹ 849.80 | ₹ 5,948.60 |
Stock: 749
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 953.19 | ₹ 953.19 |
| 10 | ₹ 517.98 | ₹ 5,179.80 |
| 100 | ₹ 491.28 | ₹ 49,128.00 |
| 600 | ₹ 490.39 | ₹ 2,94,234.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | FDmesh™ II | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 600 V | |
| Continuous Drain Current at 25C | 29A (Tc) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 110mOhm @ 14.5A, 10V | |
| Max Threshold Gate Voltage | 5V @ 250µA | |
| Max Gate Charge at Vgs | 80.4 nC @ 10 V | |
| Maximum Gate Voltage | ±25V | |
| Max Input Cap at Vds | 2785 pF @ 50 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 190W (Tc) | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-247-3 | |
| Component Housing Style | TO-247-3 |
Description
Supports a continuous drain current (Id) of 29A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 600 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 80.4 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 80.4 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 2785 pF @ 50 V at Vds for safeguarding the device. The input capacitance is rated at 2785 pF @ 50 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Enclosure type TO-247-3 ensuring device integrity. Highest power dissipation 190W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 80.4 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 110mOhm @ 14.5A, 10V for MOSFET criteria. Product or component classification series FDmesh™ II. Manufacturer package type TO-247-3 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±25V for MOSFET parameters. Peak Vgs(th) at Id 5V @ 250µA for MOSFET threshold level.
