STS7NF60L

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 7.5A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 60 V. Accommodates drive voltage specified at 5V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 34 nC @ 4.5 V gate charge at Vgs for enhanced switching efficiency. Upholds 34 nC @ 4.5 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1700 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 1700 pF @ 25 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Enclosure type 8-SOIC ensuring device integrity. Highest power dissipation 2.5W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 34 nC @ 4.5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 19.5mOhm @ 3.5A, 10V for MOSFET criteria. Product or component classification series STripFET™ II. Manufacturer package type 8-SOIC for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±16V for MOSFET parameters. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.