Stock: 22000
Distributor: 145
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 740 | ₹ 41.73 | ₹ 30,880.20 |
| 555 | ₹ 46.47 | ₹ 25,790.85 |
| 430 | ₹ 48.10 | ₹ 20,683.00 |
| 315 | ₹ 49.65 | ₹ 15,639.75 |
| 205 | ₹ 51.29 | ₹ 10,514.45 |
| 85 | ₹ 62.50 | ₹ 5,312.50 |
Stock: 219
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 127.27 | ₹ 127.27 |
| 10 | ₹ 108.58 | ₹ 1,085.80 |
| 25 | ₹ 108.58 | ₹ 2,714.50 |
| 100 | ₹ 80.99 | ₹ 8,099.00 |
| 500 | ₹ 68.53 | ₹ 34,265.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | STripFET™ II | |
| IC Encapsulation Type | Tube | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 75 V | |
| Continuous Drain Current at 25C | 80A (Tc) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 11mOhm @ 40A, 10V | |
| Max Threshold Gate Voltage | 4V @ 250µA | |
| Max Gate Charge at Vgs | 160 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 3700 pF @ 25 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 45W (Tc) | |
| Ambient Temp Range | -55°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-220FP | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 80A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 75 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 160 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 160 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 3700 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 3700 pF @ 25 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Enclosure type TO-220FP ensuring device integrity. Highest power dissipation 45W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 160 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 11mOhm @ 40A, 10V for MOSFET criteria. Product or component classification series STripFET™ II. Manufacturer package type TO-220FP for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 4V @ 250µA for MOSFET threshold level.
