Stock: 6494
Distributor: 122
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 5000 | ₹ 47.75 | ₹ 2,38,750.00 |
| 2000 | ₹ 49.99 | ₹ 99,980.00 |
| 1000 | ₹ 53.00 | ₹ 53,000.00 |
Stock: 6000
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1000 | ₹ 47.75 | ₹ 47,750.00 |
Stock: 1558
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 5000 | ₹ 51.06 | ₹ 2,55,300.00 |
| 2000 | ₹ 55.63 | ₹ 1,11,260.00 |
| 1000 | ₹ 60.16 | ₹ 60,160.00 |
| 500 | ₹ 65.55 | ₹ 32,775.00 |
| 100 | ₹ 82.31 | ₹ 8,231.00 |
| 50 | ₹ 91.85 | ₹ 4,592.50 |
| 1 | ₹ 189.57 | ₹ 189.57 |
Stock: 40
Distributor: 58
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10 | ₹ 182.23 | ₹ 1,822.30 |
| 5 | ₹ 184.18 | ₹ 920.90 |
Stock: 1009
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 186.01 | ₹ 186.01 |
| 10 | ₹ 90.78 | ₹ 907.80 |
| 100 | ₹ 83.66 | ₹ 8,366.00 |
| 500 | ₹ 65.86 | ₹ 32,930.00 |
Stock: 222
Distributor: 130
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 186.74 | ₹ 186.74 |
| 10 | ₹ 92.07 | ₹ 920.70 |
| 100 | ₹ 84.69 | ₹ 8,469.00 |
| 500 | ₹ 71.31 | ₹ 35,655.00 |
| 1000 | ₹ 54.89 | ₹ 54,890.00 |
| 5000 | ₹ 53.25 | ₹ 2,66,250.00 |
Stock: 1009
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 189.57 | ₹ 189.57 |
| 10 | ₹ 92.56 | ₹ 925.60 |
| 100 | ₹ 85.08 | ₹ 8,508.00 |
| 500 | ₹ 66.75 | ₹ 33,375.00 |
| 1000 | ₹ 60.25 | ₹ 60,250.00 |
| 2000 | ₹ 55.00 | ₹ 1,10,000.00 |
| 5000 | ₹ 52.51 | ₹ 2,62,550.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | STripFET™ II | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 60 V | |
| Continuous Drain Current at 25C | 50A (Tc) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 18mOhm @ 27.5A, 10V | |
| Max Threshold Gate Voltage | 4V @ 250µA | |
| Max Gate Charge at Vgs | 60 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 1300 pF @ 25 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 30W (Tc) | |
| Ambient Temp Range | -55°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-220FP | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Supports a continuous drain current (Id) of 50A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 60 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 60 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 60 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1300 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 1300 pF @ 25 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Enclosure type TO-220FP ensuring device integrity. Highest power dissipation 30W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 60 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 18mOhm @ 27.5A, 10V for MOSFET criteria. Product or component classification series STripFET™ II. Manufacturer package type TO-220FP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 4V @ 250µA for MOSFET threshold level.
