STL6N2VH5

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 6A (Tj) at 25°C. Supports Vdss drain-to-source voltage rated at 20 V. Accommodates drive voltage specified at 2.5V, 4.5V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 6 nC @ 4.5 V gate charge at Vgs for enhanced switching efficiency. Upholds 6 nC @ 4.5 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 550 pF @ 16 V at Vds for safeguarding the device. The input capacitance is rated at 550 pF @ 16 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 6-PowerWDFN providing mechanical and thermal shielding. Enclosure type PowerFlat™ (2x2) ensuring device integrity. Highest power dissipation 2.4W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 6 nC @ 4.5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 30mOhm @ 3A, 4.5V for MOSFET criteria. Product or component classification series STripFET™ V. Manufacturer package type PowerFlat™ (2x2) for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±8V for MOSFET parameters. Peak Vgs(th) at Id 700mV @ 250µA (Min) for MOSFET threshold level.