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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | SuperMESH3™ | |
| IC Encapsulation Type | Tube | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 620 V | |
| Continuous Drain Current at 25C | 8.4A (Tc) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 750mOhm @ 4A, 10V | |
| Max Threshold Gate Voltage | 4.5V @ 100µA | |
| Max Gate Charge at Vgs | 42 nC @ 10 V | |
| Maximum Gate Voltage | ±30V | |
| Max Input Cap at Vds | 1250 pF @ 50 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 125W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | I2PAK | |
| Component Housing Style | TO-262-3 Long Leads, I2PAK, TO-262AA |
Description
Supports a continuous drain current (Id) of 8.4A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 620 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 42 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 42 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1250 pF @ 50 V at Vds for safeguarding the device. The input capacitance is rated at 1250 pF @ 50 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-262-3 Long Leads, I2PAK, TO-262AA providing mechanical and thermal shielding. Enclosure type I2PAK ensuring device integrity. Highest power dissipation 125W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 42 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 750mOhm @ 4A, 10V for MOSFET criteria. Product or component classification series SuperMESH3™. Manufacturer package type I2PAK for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±30V for MOSFET parameters. Peak Vgs(th) at Id 4.5V @ 100µA for MOSFET threshold level.
