Stock: 466
Distributor: 120
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 459 | ₹ 87.46 | ₹ 40,144.14 |
| 225 | ₹ 92.43 | ₹ 20,796.75 |
| 106 | ₹ 99.56 | ₹ 10,553.36 |
| 34 | ₹ 106.66 | ₹ 3,626.44 |
| 12 | ₹ 138.65 | ₹ 1,663.80 |
| 3 | ₹ 213.32 | ₹ 639.96 |
Stock: 1199
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 500 | ₹ 119.04 | ₹ 59,520.00 |
| 100 | ₹ 138.26 | ₹ 13,826.00 |
| 50 | ₹ 152.53 | ₹ 7,626.50 |
| 1 | ₹ 299.93 | ₹ 299.93 |
Stock: 372
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 107 | ₹ 195.03 | ₹ 20,868.21 |
| 30 | ₹ 210.84 | ₹ 6,325.20 |
| 1 | ₹ 316.26 | ₹ 316.26 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | SuperMESH5™ | |
| IC Encapsulation Type | Tube | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 800 V | |
| Continuous Drain Current at 25C | 6A (Tc) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 1.2Ohm @ 3A, 10V | |
| Max Threshold Gate Voltage | 5V @ 100µA | |
| Max Gate Charge at Vgs | 13.4 nC @ 10 V | |
| Maximum Gate Voltage | ±30V | |
| Max Input Cap at Vds | 360 pF @ 100 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 25W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | I2PAKFP (TO-281) | |
| Component Housing Style | TO-262-3 Full Pack, I2PAK |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 6A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 800 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 13.4 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 13.4 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 360 pF @ 100 V at Vds for safeguarding the device. The input capacitance is rated at 360 pF @ 100 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-262-3 Full Pack, I2PAK providing mechanical and thermal shielding. Enclosure type I2PAKFP (TO-281) ensuring device integrity. Highest power dissipation 25W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 13.4 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 1.2Ohm @ 3A, 10V for MOSFET criteria. Product or component classification series SuperMESH5™. Manufacturer package type I2PAKFP (TO-281) for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±30V for MOSFET parameters. Peak Vgs(th) at Id 5V @ 100µA for MOSFET threshold level.
