Stock: 2562
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 67.88 | ₹ 6,78,800.00 |
| 5000 | ₹ 68.66 | ₹ 3,43,300.00 |
| 1000 | ₹ 69.06 | ₹ 69,060.00 |
| 14 | ₹ 69.46 | ₹ 972.44 |
Stock: 2575
Distributor: 122
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 68.10 | ₹ 6,81,000.00 |
| 5000 | ₹ 68.89 | ₹ 3,44,450.00 |
| 1000 | ₹ 69.28 | ₹ 69,280.00 |
| 10 | ₹ 69.69 | ₹ 696.90 |
| 1 | ₹ 117.25 | ₹ 117.25 |
Stock: 500
Distributor: 11
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 500 | ₹ 79.21 | ₹ 39,605.00 |
| 250 | ₹ 84.55 | ₹ 21,137.50 |
| 100 | ₹ 92.56 | ₹ 9,256.00 |
| 50 | ₹ 98.79 | ₹ 4,939.50 |
| 10 | ₹ 113.92 | ₹ 1,139.20 |
| 1 | ₹ 210.93 | ₹ 210.93 |
Stock: 1000
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1000 | ₹ 95.01 | ₹ 95,010.00 |
Stock: 949
Distributor: 130
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 210.33 | ₹ 210.33 |
| 10 | ₹ 112.36 | ₹ 1,123.60 |
| 100 | ₹ 88.45 | ₹ 8,845.00 |
| 500 | ₹ 88.40 | ₹ 44,200.00 |
| 1000 | ₹ 88.36 | ₹ 88,360.00 |
| 5000 | ₹ 86.59 | ₹ 4,32,950.00 |
Stock: 795
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 284.80 | ₹ 284.80 |
| 10 | ₹ 89.89 | ₹ 898.90 |
| 100 | ₹ 89.89 | ₹ 8,989.00 |
| 500 | ₹ 89.89 | ₹ 44,945.00 |
Stock: 795
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 290.14 | ₹ 290.14 |
| 10 | ₹ 91.67 | ₹ 916.70 |
| 1000 | ₹ 90.78 | ₹ 90,780.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | SuperMESH3™ | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 650 V | |
| Continuous Drain Current at 25C | 5.4A (Tc) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 1.3Ohm @ 2.8A, 10V | |
| Max Threshold Gate Voltage | 4.5V @ 50µA | |
| Max Gate Charge at Vgs | 35 nC @ 10 V | |
| Maximum Gate Voltage | ±30V | |
| Max Input Cap at Vds | 880 pF @ 50 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 30W (Tc) | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-220FP | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Supports a continuous drain current (Id) of 5.4A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 650 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 35 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 35 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 880 pF @ 50 V at Vds for safeguarding the device. The input capacitance is rated at 880 pF @ 50 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Enclosure type TO-220FP ensuring device integrity. Highest power dissipation 30W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 35 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 1.3Ohm @ 2.8A, 10V for MOSFET criteria. Product or component classification series SuperMESH3™. Manufacturer package type TO-220FP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±30V for MOSFET parameters. Peak Vgs(th) at Id 4.5V @ 50µA for MOSFET threshold level.
