STD150N3LLH6

STD150N3LLH6
Attribute
Description
Manufacturer Part Number
STD150N3LLH6
Manufacturer
Description
MOSFET N-CH 30V 80A DPAK
Note : GST will not be applied to orders shipping outside of India

Stock:
664

Distributor: 120

Lead Time: Not specified

Quantity Unit Price Ext. Price
392 ₹ 63.82 ₹ 25,017.44
119 ₹ 68.39 ₹ 8,138.41
34 ₹ 113.97 ₹ 3,874.98
11 ₹ 136.78 ₹ 1,504.58
3 ₹ 182.36 ₹ 547.08

Stock:
531

Distributor: 118

Lead Time: Not specified


Quantity Unit Price Ext. Price
467 ₹ 102.21 ₹ 47,732.07
217 ₹ 114.60 ₹ 24,868.20
1 ₹ 247.78 ₹ 247.78

Stock:
1

Distributor: 142

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 177.11 ₹ 177.11
10 ₹ 147.74 ₹ 1,477.40
100 ₹ 130.83 ₹ 13,083.00
250 ₹ 124.60 ₹ 31,150.00
500 ₹ 113.03 ₹ 56,515.00

Stock:
1

Distributor: 130

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 245.71 ₹ 245.71
10 ₹ 158.98 ₹ 1,589.80
100 ₹ 109.52 ₹ 10,952.00
500 ₹ 107.33 ₹ 53,665.00
1000 ₹ 105.14 ₹ 1,05,140.00
5000 ₹ 102.95 ₹ 5,14,750.00

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line DeepGATE™, STripFET™ VI
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Field Effect Transistor Type N-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 30 V
Continuous Drain Current at 25C 80A (Tc)
Gate Drive Voltage Range 4.5V, 10V
Max On-State Resistance 2.8mOhm @ 40A, 10V
Max Threshold Gate Voltage 2.5V @ 250µA
Max Gate Charge at Vgs 29 nC @ 4.5 V
Maximum Gate Voltage ±20V
Max Input Cap at Vds 3700 pF @ 25 V
Transistor Special Function -
Max Heat Dissipation 110W (Tc)
Ambient Temp Range 175°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type DPAK
Component Housing Style TO-252-3, DPAK (2 Leads + Tab), SC-63

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 80A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 30 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 29 nC @ 4.5 V gate charge at Vgs for enhanced switching efficiency. Upholds 29 nC @ 4.5 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 3700 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 3700 pF @ 25 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature 175°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case TO-252-3, DPAK (2 Leads + Tab), SC-63 providing mechanical and thermal shielding. Enclosure type DPAK ensuring device integrity. Highest power dissipation 110W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 29 nC @ 4.5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 2.8mOhm @ 40A, 10V for MOSFET criteria. Product or component classification series DeepGATE™, STripFET™ VI. Manufacturer package type DPAK for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold level.

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