STD12NF06L-1

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 12A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 60 V. Accommodates drive voltage specified at 5V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 10 nC @ 5 V gate charge at Vgs for enhanced switching efficiency. Upholds 10 nC @ 5 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 350 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 350 pF @ 25 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-251-3 Short Leads, IPAK, TO-251AA providing mechanical and thermal shielding. Enclosure type IPAK ensuring device integrity. Highest power dissipation 42.8W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 10 nC @ 5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 100mOhm @ 6A, 10V for MOSFET criteria. Product or component classification series STripFET™ II. Manufacturer package type IPAK for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±16V for MOSFET parameters. Peak Vgs(th) at Id 2V @ 250µA for MOSFET threshold level.