STB20NM50FDT4

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 20A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 500 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 53 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 53 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1380 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 1380 pF @ 25 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB providing mechanical and thermal shielding. Enclosure type D2PAK ensuring device integrity. Highest power dissipation 192W (Tc) for effective thermal control. Product condition Not For New Designs for availability and lifecycle. Peak Rds(on) at Id 53 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 250mOhm @ 10A, 10V for MOSFET criteria. Product or component classification series FDmesh™. Manufacturer package type D2PAK for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±30V for MOSFET parameters. Peak Vgs(th) at Id 5V @ 250µA for MOSFET threshold level.