2SK2632LS
Data Sheet
Attribute
Description
Manufacturer Part Number
2SK2632LS
Manufacturer
Description
MOSFET N-CH 800V 2.5A TO-220FI
Note :
GST will not be applied to orders shipping outside of India
Stock: 77
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 75.04 | ₹ 75,04,000.00 |
| 10000 | ₹ 89.89 | ₹ 8,98,900.00 |
| 1000 | ₹ 100.57 | ₹ 1,00,570.00 |
| 500 | ₹ 108.58 | ₹ 54,290.00 |
| 100 | ₹ 121.04 | ₹ 12,104.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 800V | |
| Continuous Drain Current at 25C | 2.5A (Ta) | |
| Max On-State Resistance | 4.8 Ohm @ 1.3A, 15V | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | 15nC @ 10V | |
| Input Cap at Vds | 550pF @ 20V | |
| Maximum Power Handling | 2W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 2.5A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 800V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 15nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 550pF @ 20V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Peak power 2W for device protection. Peak Rds(on) at Id 15nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 4.8 Ohm @ 1.3A, 15V for MOSFET criteria.
