2SJ650
Data Sheet
Attribute
Description
Manufacturer Part Number
2SJ650
Manufacturer
Description
MOSFET P-CH 60V 12A TO-220ML
Note :
GST will not be applied to orders shipping outside of India
Stock: 159
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 26.24 | ₹ 26,24,000.00 |
| 10000 | ₹ 31.32 | ₹ 3,13,200.00 |
| 1000 | ₹ 35.13 | ₹ 35,130.00 |
| 500 | ₹ 38.09 | ₹ 19,045.00 |
| 100 | ₹ 42.32 | ₹ 4,232.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 12A (Ta) | |
| Max On-State Resistance | 135 mOhm @ 6A, 10V | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | 21nC @ 10V | |
| Input Cap at Vds | 1020pF @ 20V | |
| Maximum Power Handling | 2W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 12A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 21nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1020pF @ 20V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Peak power 2W for device protection. Peak Rds(on) at Id 21nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 135 mOhm @ 6A, 10V for MOSFET criteria.
