Stock: 50
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10 | ₹ 82.24 | ₹ 822.40 |
| 1 | ₹ 121.93 | ₹ 121.93 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tape & Reel (TR)Cut Tape (CT) | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 30 V | |
| Continuous Drain Current at 25C | 14A (Ta) | |
| Gate Drive Voltage Range | 4.5V, 10V | |
| Max On-State Resistance | 6.2mOhm @ 31A, 10V | |
| Max Threshold Gate Voltage | 2.5V @ 350µA | |
| Max Gate Charge at Vgs | 24.6 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 1480 pF @ 15 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 3.1W (Ta), 46W (Tc) | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | 8-DFN (5x6) | |
| Component Housing Style | 8-PowerTDFN |
Description
Supports a continuous drain current (Id) of 14A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 30 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 24.6 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 24.6 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1480 pF @ 15 V at Vds for safeguarding the device. The input capacitance is rated at 1480 pF @ 15 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT) for component protection or transport. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Enclosure type 8-DFN (5x6) ensuring device integrity. Highest power dissipation 3.1W (Ta), 46W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 24.6 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 6.2mOhm @ 31A, 10V for MOSFET criteria. Manufacturer package type 8-DFN (5x6) for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 2.5V @ 350µA for MOSFET threshold level.
