Stock: 2085
Distributor: 128
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 24.37 | ₹ 2,43,700.00 |
| 5000 | ₹ 25.92 | ₹ 1,29,600.00 |
| 2500 | ₹ 27.06 | ₹ 67,650.00 |
| 1000 | ₹ 29.53 | ₹ 29,530.00 |
| 500 | ₹ 31.42 | ₹ 15,710.00 |
| 200 | ₹ 33.60 | ₹ 6,720.00 |
| 100 | ₹ 35.44 | ₹ 3,544.00 |
| 50 | ₹ 41.34 | ₹ 2,067.00 |
| 10 | ₹ 48.57 | ₹ 485.70 |
| 5 | ₹ 64.80 | ₹ 324.00 |
Stock: 2085
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1000 | ₹ 35.96 | ₹ 35,960.00 |
| 500 | ₹ 41.92 | ₹ 20,960.00 |
| 200 | ₹ 49.31 | ₹ 9,862.00 |
| 107 | ₹ 65.86 | ₹ 7,047.02 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 40 V | |
| Continuous Drain Current at 25C | 29A (Tc) | |
| Gate Drive Voltage Range | 4.5V, 10V | |
| Max On-State Resistance | 11.5mOhm @ 18.8A, 10V | |
| Max Threshold Gate Voltage | 2.5V @ 250µA | |
| Max Gate Charge at Vgs | 14.5 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 990 pF @ 25 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 32W (Tc) | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | TO-252 | |
| Component Housing Style | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
Description
Supports a continuous drain current (Id) of 29A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 40 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 14.5 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 14.5 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 990 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 990 pF @ 25 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case TO-252-3, DPAK (2 Leads + Tab), SC-63 providing mechanical and thermal shielding. Enclosure type TO-252 ensuring device integrity. Highest power dissipation 32W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 14.5 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 11.5mOhm @ 18.8A, 10V for MOSFET criteria. Manufacturer package type TO-252 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold level.
