RUM001L02T2CL
Data Sheet
Attribute
Description
Manufacturer Part Number
RUM001L02T2CL
Manufacturer
Description
MOSFET N-CH 20V 0.1A VMT3
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 100mA (Ta) | |
| Max On-State Resistance | 3.5 Ohm @ 100mA, 4.5V | |
| Max Threshold Gate Voltage | 1V @ 100µA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 7.1pF @ 10V | |
| Maximum Power Handling | 150mW | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 100mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. The input capacitance is rated at 7.1pF @ 10V at Vds for optimal performance. Peak power 150mW for device protection. Peak Rds(on) at Id and Vgs 3.5 Ohm @ 100mA, 4.5V for MOSFET criteria. Peak Vgs(th) at Id 1V @ 100µA for MOSFET threshold level.
