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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N and P-Channel | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 2.5A | |
| Max On-State Resistance | 80 mOhm @ 1.5A, 10V | |
| Max Threshold Gate Voltage | 2.6V @ 1mA | |
| Gate Charge at Vgs | 10nC @ 10V | |
| Input Cap at Vds | 505pF @ 20V | |
| Maximum Power Handling | 1W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SMD, Flat Lead |
Description
Measures resistance at forward current N and P-Channel for LED or diode evaluation. Supports a continuous drain current (Id) of 2.5A at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Accommodates FET classification identified as N and P-Channel. Upholds 10nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 505pF @ 20V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-SMD, Flat Lead providing mechanical and thermal shielding. Peak power 1W for device protection. Peak Rds(on) at Id 10nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 80 mOhm @ 1.5A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.6V @ 1mA for MOSFET threshold level.
