Attribute
Description
Manufacturer Part Number
TF256-3-TL-H
Manufacturer
Description
Junction Field Effect Transistors,
30mW
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N-Channel | |
| Breakdown VBR GSS | - | |
| Drain-Source Breakdown Volts | - | |
| Drain Current at Vds | 100µA @ 2V | |
| Drain Current Id | 1mA | |
| Cutoff VGS at Id | 100mV @ 1µA | |
| Maximum Power Handling | 30mW | |
| Input Cap at Vds | 3.1pF @ 2V | |
| RDS On Resistance | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 3-SMD, Flat Leads |
Description
Measures resistance at forward current N-Channel for LED or diode evaluation. Supports a drain current Idss at Vds measured at 100µA @ 2V. Rated for drain current Id at 1mA. Accommodates FET classification identified as N-Channel. The input capacitance is rated at 3.1pF @ 2V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 3-SMD, Flat Leads providing mechanical and thermal shielding. Peak power 30mW for device protection. Peak Rds(on) at Id 100mV @ 1µA for MOSFET efficiency. Cutoff voltage VGS off at Id 100mV @ 1µA for MOSFETs.