Attribute
Description
Manufacturer Part Number
ECH8602M-TL-H
Manufacturer
Description
MOSFET N-CH 30V 6A ECH8
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 2 N-Channel (Dual) | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 6A | |
| Max On-State Resistance | 30 mOhm @ 3A, 4.5V | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | 7.5nC @ 4.5V | |
| Input Cap at Vds | - | |
| Maximum Power Handling | 1.5W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SMD, Flat Lead |
Description
Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Supports a continuous drain current (Id) of 6A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as 2 N-Channel (Dual). Upholds 7.5nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Enclosure/case 8-SMD, Flat Lead providing mechanical and thermal shielding. Peak power 1.5W for device protection. Peak Rds(on) at Id 7.5nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 30 mOhm @ 3A, 4.5V for MOSFET criteria.
