Stock: 192
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 42.64 | ₹ 42,64,000.00 |
| 10000 | ₹ 50.89 | ₹ 5,08,900.00 |
| 1000 | ₹ 57.08 | ₹ 57,080.00 |
| 500 | ₹ 61.89 | ₹ 30,945.00 |
| 100 | ₹ 68.77 | ₹ 6,877.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | TrenchMOS™ | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 30 V | |
| Continuous Drain Current at 25C | 10A (Tj) | |
| Gate Drive Voltage Range | 4.5V, 10V | |
| Max On-State Resistance | 13.5mOhm @ 10A, 10V | |
| Max Threshold Gate Voltage | 1V @ 250µA | |
| Max Gate Charge at Vgs | 34 nC @ 5 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | - | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 2.5W (Ta) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | 8-SO | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) |
Description
Supports a continuous drain current (Id) of 10A (Tj) at 25°C. Supports Vdss drain-to-source voltage rated at 30 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 34 nC @ 5 V gate charge at Vgs for enhanced switching efficiency. Upholds 34 nC @ 5 V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Enclosure type 8-SO ensuring device integrity. Highest power dissipation 2.5W (Ta) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 34 nC @ 5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 13.5mOhm @ 10A, 10V for MOSFET criteria. Product or component classification series TrenchMOS™. Manufacturer package type 8-SO for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.
