Stock: 178
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 104.13 | ₹ 10,41,300.00 |
| 1000 | ₹ 110.36 | ₹ 1,10,360.00 |
| 500 | ₹ 116.59 | ₹ 58,295.00 |
| 100 | ₹ 123.71 | ₹ 12,371.00 |
| 25 | ₹ 129.94 | ₹ 3,248.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tube | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 100 V | |
| Continuous Drain Current at 25C | 49A (Tj) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 8.5mOhm @ 10A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Max Gate Charge at Vgs | 100 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 5512 pF @ 50 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 55W (Tc) | |
| Ambient Temp Range | -55°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-220F | |
| Component Housing Style | TO-220-3 Full Pack, Isolated Tab |
Description
Supports a continuous drain current (Id) of 49A (Tj) at 25°C. Supports Vdss drain-to-source voltage rated at 100 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 100 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 100 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 5512 pF @ 50 V at Vds for safeguarding the device. The input capacitance is rated at 5512 pF @ 50 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-220-3 Full Pack, Isolated Tab providing mechanical and thermal shielding. Enclosure type TO-220F ensuring device integrity. Highest power dissipation 55W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 100 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 8.5mOhm @ 10A, 10V for MOSFET criteria. Manufacturer package type TO-220F for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
