Stock: 24542
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 0.08 | ₹ 8,000.00 |
| 10000 | ₹ 0.10 | ₹ 1,000.00 |
| 1000 | ₹ 0.11 | ₹ 110.00 |
| 500 | ₹ 0.12 | ₹ 60.00 |
| 100 | ₹ 0.13 | ₹ 13.00 |
Stock: 24542
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 9.13 | ₹ 9,13,000.00 |
| 10000 | ₹ 10.90 | ₹ 1,09,000.00 |
| 1000 | ₹ 12.23 | ₹ 12,230.00 |
| 500 | ₹ 13.26 | ₹ 6,630.00 |
| 100 | ₹ 14.73 | ₹ 1,473.00 |
Stock: 6000
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 11.42 | ₹ 11,42,000.00 |
| 10000 | ₹ 13.63 | ₹ 1,36,300.00 |
| 2184 | ₹ 15.29 | ₹ 33,393.36 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 1.8A (Ta) | |
| Max On-State Resistance | 74 mOhm @ 1.8A, 4.5V | |
| Max Threshold Gate Voltage | 1V @ 250µA | |
| Gate Charge at Vgs | 3.3nC @ 4.5V | |
| Input Cap at Vds | 185pF @ 10V | |
| Maximum Power Handling | 275mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-70, SOT-323 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 1.8A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 3.3nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 185pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case SC-70, SOT-323 providing mechanical and thermal shielding. Peak power 275mW for device protection. Peak Rds(on) at Id 3.3nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 74 mOhm @ 1.8A, 4.5V for MOSFET criteria. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.
