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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N-Channel | |
| Breakdown VBR GSS | 40V | |
| Drain-Source Breakdown Volts | 40V | |
| Drain Current at Vds | 5mA @ 20V | |
| Drain Current Id | - | |
| Cutoff VGS at Id | 500mV @ 1nA | |
| Maximum Power Handling | 250mW | |
| Input Cap at Vds | 14pF @ 20V | |
| RDS On Resistance | 100 Ohm | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current N-Channel for LED or diode evaluation. Supports a drain current Idss at Vds measured at 5mA @ 20V. Supports Vdss drain-to-source voltage rated at 40V. Accommodates FET classification identified as N-Channel. The input capacitance is rated at 14pF @ 20V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Resistance in the on-state 100 Ohm for efficient conduction. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 250mW for device protection. Peak Rds(on) at Id 500mV @ 1nA for MOSFET efficiency. RDS(on) resistance value 100 Ohm for MOSFET operation. V(BR)GSS breakdown level 40V for semiconductors. Cutoff voltage VGS off at Id 500mV @ 1nA for MOSFETs.
