PHP225,118
Data Sheet
Stock: 4434
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 24.23 | ₹ 24,23,000.00 |
| 10000 | ₹ 28.93 | ₹ 2,89,300.00 |
| 1000 | ₹ 32.44 | ₹ 32,440.00 |
| 500 | ₹ 35.18 | ₹ 17,590.00 |
| 100 | ₹ 39.09 | ₹ 3,909.00 |
Stock: 4434
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 27.00 | ₹ 27,00,000.00 |
| 10000 | ₹ 32.24 | ₹ 3,22,400.00 |
| 1000 | ₹ 36.15 | ₹ 36,150.00 |
| 500 | ₹ 39.20 | ₹ 19,600.00 |
| 100 | ₹ 43.56 | ₹ 4,356.00 |
Stock: 4434
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 33.76 | ₹ 33,76,000.00 |
| 10000 | ₹ 40.30 | ₹ 4,03,000.00 |
| 1000 | ₹ 45.19 | ₹ 45,190.00 |
| 682 | ₹ 49.00 | ₹ 33,418.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 2 P-Channel (Dual) | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 2.3A | |
| Max On-State Resistance | 250 mOhm @ 1A, 10V | |
| Max Threshold Gate Voltage | 2.8V @ 1mA | |
| Gate Charge at Vgs | 25nC @ 10V | |
| Input Cap at Vds | 250pF @ 20V | |
| Maximum Power Handling | 2W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) |
Description
Measures resistance at forward current 2 P-Channel (Dual) for LED or diode evaluation. Supports a continuous drain current (Id) of 2.3A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as 2 P-Channel (Dual). Upholds 25nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 250pF @ 20V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Peak power 2W for device protection. Peak Rds(on) at Id 25nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 250 mOhm @ 1A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.8V @ 1mA for MOSFET threshold level.
