Stock: 2200
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 28.07 | ₹ 28,07,000.00 |
| 10000 | ₹ 33.50 | ₹ 3,35,000.00 |
| 1000 | ₹ 37.58 | ₹ 37,580.00 |
| 500 | ₹ 40.74 | ₹ 20,370.00 |
| 100 | ₹ 45.27 | ₹ 4,527.00 |
Stock: 2200
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 31.27 | ₹ 31,27,000.00 |
| 10000 | ₹ 37.33 | ₹ 3,73,300.00 |
| 1000 | ₹ 41.87 | ₹ 41,870.00 |
| 500 | ₹ 45.40 | ₹ 22,700.00 |
| 100 | ₹ 50.45 | ₹ 5,045.00 |
Stock: 2200
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 39.10 | ₹ 39,10,000.00 |
| 10000 | ₹ 46.66 | ₹ 4,66,600.00 |
| 1000 | ₹ 52.33 | ₹ 52,330.00 |
| 589 | ₹ 56.75 | ₹ 33,425.75 |
Stock: 198
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 49 | ₹ 66.75 | ₹ 3,270.75 |
| 11 | ₹ 111.25 | ₹ 1,223.75 |
| 1 | ₹ 222.50 | ₹ 222.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 2 N-Channel (Dual) | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 6.3A | |
| Max On-State Resistance | 30 mOhm @ 7A, 10V | |
| Max Threshold Gate Voltage | 2V @ 1mA | |
| Gate Charge at Vgs | 14.6nC @ 10V | |
| Input Cap at Vds | 560pF @ 20V | |
| Maximum Power Handling | 2W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) |
Description
Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Supports a continuous drain current (Id) of 6.3A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as 2 N-Channel (Dual). Upholds 14.6nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 560pF @ 20V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Peak power 2W for device protection. Peak Rds(on) at Id 14.6nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 30 mOhm @ 7A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2V @ 1mA for MOSFET threshold level.
