NX3008PBKT,115

NX3008PBKT,115

Data Sheet

Attribute
Description
Manufacturer Part Number
NX3008PBKT,115
Manufacturer
Description
MOSFET P-CH 30V 200MA SC75
Note : GST will not be applied to orders shipping outside of India

Stock:
3000

Distributor: 160

Lead Time: Not specified

Quantity Unit Price Ext. Price
100000 ₹ 0.04 ₹ 4,000.00
10000 ₹ 0.04 ₹ 400.00
1000 ₹ 0.04 ₹ 40.00
500 ₹ 0.04 ₹ 20.00
100 ₹ 0.05 ₹ 5.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Field Effect Transistor Type P-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 30 V
Continuous Drain Current at 25C 200mA (Ta)
Gate Drive Voltage Range 2.5V, 4.5V
Max On-State Resistance 4.1Ohm @ 200mA, 4.5V
Max Threshold Gate Voltage 1.1V @ 250µA
Max Gate Charge at Vgs 0.72 nC @ 4.5 V
Maximum Gate Voltage ±8V
Max Input Cap at Vds 46 pF @ 15 V
Transistor Special Function -
Max Heat Dissipation 250mW (Ta), 770mW (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level Automotive
Certification Qualification AEC-Q101
Attachment Mounting Style Surface Mount
Vendor Package Type SC-75
Component Housing Style SC-75, SOT-416

Description

Supports a continuous drain current (Id) of 200mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 30 V. Accommodates drive voltage specified at 2.5V, 4.5V for RdsOn regulation. Accommodates FET classification identified as P-Channel. Guarantees maximum 0.72 nC @ 4.5 V gate charge at Vgs for enhanced switching efficiency. Upholds 0.72 nC @ 4.5 V gate charge at Vgs for reliable MOSFET functionality. Rated as Automotive grade for quality assurance. The highest input capacitance is 46 pF @ 15 V at Vds for safeguarding the device. The input capacitance is rated at 46 pF @ 15 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case SC-75, SOT-416 providing mechanical and thermal shielding. Enclosure type SC-75 ensuring device integrity. Highest power dissipation 250mW (Ta), 770mW (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Certification AEC-Q101 for compliance or testing purposes. Peak Rds(on) at Id 0.72 nC @ 4.5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 4.1Ohm @ 200mA, 4.5V for MOSFET criteria. Manufacturer package type SC-75 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±8V for MOSFET parameters. Peak Vgs(th) at Id 1.1V @ 250µA for MOSFET threshold level.

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